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 Fast Recovery Epitaxial Diode (FRED)
DSEI 120
IFAVM = 109 A VRRM = 1200 V trr = 40 ns
VRSM V 1200
VRRM V 1200
Type
A
C
TO-247 AD
C
DSEI 120-12A
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM yyx IFAV y IFRM IFSM
Test Conditions TVJ = TVJM TC = 60C; rectangular, d = 0.5 TC = 95C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 100 109 75 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 A A A A A A A A A2s A2s A2s A2s C C C W
Features
q
q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
Applications
q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
q q q
357 0.8...1.2 6
q
Nm g
q q q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Symbol
Test Conditions
Characteristic Values typ. max.
Advantages
IR TVJ = 25C TVJ = 25C TVJ = 125C IF = 70 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C 3 1.5 20 1.55 1.8 1.2 4.6 0.35 0.25 35 IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 75 A; -diF/dt = 200 A/ms L 0.05 mH; TVJ = 100C 40 25 60 30 mA mA mA V V V mW K/W K/W K/W ns A
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
Dimensions See DSEI 60-12 on page D5 - 27
x Chip capability, y limited to 70 A by leads Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
009
(c) 2000 IXYS All rights reserved
1-2
DSEI 120, 1200 V
150 A 125 IF 100
TVJ=150C
16 T = 100C VJ C V = 600V 14 R Qr 12 10 8
TVJ=100C IF=140A IF= 70A IF= 35A
120 TVJ= 100C A VR = 600V 100 IRM 80 60 40 20 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
IF=140A IF= 70A IF= 35A
75 50
TVJ= 25C
6 4 2 0 100
25 0 0.0
0.5
1.0
1.5 V 2.0 VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
500 ns 450 trr 400
TVJ= 100C VR = 600V
Fig. 3 Peak reverse current IRM versus -diF/dt
60 V 50 VFR 40
tfr VFR TVJ= 100C IF = 100A
1.4
1.5 s tfr 1.0
1.2 Kf 1.0
IRM
350 300
0.8
IF=140A IF= 70A IF= 35A
30 20 10 0 0.0 1000 A/ms 0.5
0.6
Qr
250 200 0 40 80 120 C 160 TVJ 0 200 400 600 A/ms 1000 800 -diF/dt
0.4
0
200
400
600 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.017 0.0184 0.1296 0.185 ti (s) 0.00038 0.0026 0.0387 0.274
D=0.7 0.5
ZthJC 0.1
0.3 0.2 0.01 0.05 Single Pulse
1 2 3 4
0.01 0.001
DSEI 120-12
0.01
0.1
1s
10 t
Fig. 7 Transient thermal resistance junction to case
(c) 2000 IXYS All rights reserved
2-2


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